Toshiba2SC2712-GR(TE85L,FGP BJT
Trans GP BJT NPN 50V 0.15A 150mW 3-Pin S-Mini T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | Yes |
| PPAP | Unknown |
| NPN | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 60 | |
| 50 | |
| 5 | |
| 0.25@10mA@100mA | |
| 0.15 | |
| 100 | |
| 200@2mA@6V | |
| 150 | |
| 80(Min) | |
| -55 | |
| 125 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.1 |
| Verpackungsbreite | 1.5 |
| Verpackungslänge | 2.9 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | S-MINI |
| Lieferantenverpackung | S-Mini |
| 3 | |
| Leitungsform | Gull-wing |
Do you require a transistor in your circuit operating in the high-voltage range? This NPN 2SC2712-GR(TE85L,F) general purpose bipolar junction transistor, developed by Toshiba, is your solution. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 150 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 125 °C.
| EDA / CAD Models |