Compliant | |
EAR99 | |
Obsolete | |
Automotive | No |
PPAP | No |
Befestigung | Surface Mount |
Verpackungshöhe | 1.1 mm |
Verpackungsbreite | 1.5 mm |
Verpackungslänge | 2.9 mm |
Leiterplatte geändert | 3 |
Standard-Verpackungsname | S-MINI |
Lieferantenverpackung | S-Mini |
3 | |
Leitungsform | Gull-wing |
Use this versatile NPN 2SC3324-BL(TE85L,F GP BJT from Toshiba to design various electronic circuits. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 150 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 125 °C. It has a maximum collector emitter voltage of 120 V and a maximum emitter base voltage of 5 V.
EDA / CAD Models |