Toshiba2SC5200-O(Q)GP BJT
Trans GP BJT NPN 230V 15A 150000mW 3-Pin(3+Tab) TO-3PL Tray
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 26 |
| Verpackungsbreite | 5.2(Max) |
| Verpackungslänge | 20.5(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-3PL |
| 3 | |
| Leitungsform | Through Hole |
Thanks to Toshiba, your circuit can handle high levels of voltage using the NPN 2SC5200OQ general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 150000 mW. It has a maximum collector emitter voltage of 230 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |