onsemi2SC5551AE-TD-EHF-BJT
Trans RF BJT NPN 30V 0.3A 1300mW 4-Pin(3+Tab) SOT-89 T/R
| Compliant | |
| EAR99 | |
| Obsolete | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Single Dual Collector | |
| 1 | |
| 40 | |
| 30 | |
| 30 to 40 | |
| 0.3@5mA@50mA | |
| 2 | |
| 1.2@5mA@50mA | |
| 0.3 | |
| 0.12 to 0.5 | |
| 5000 | |
| 1000 | |
| 90@50mA@5V | |
| 50 to 120 | |
| 2.9 | |
| 1300 | |
| 3500(Typ) | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.5 |
| Verpackungsbreite | 2.5 |
| Verpackungslänge | 4.5 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-89 |
| 4 | |
| Leitungsform | Flat |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN 2SC5551AE-TD-E GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 2 V. Its maximum power dissipation is 1300 mW. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 2 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |