| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 100 | |
| 60 | |
| 6.5 | |
| 1.2@100mA@1A | |
| 0.135@100mA@1A|0.15@50mA@1A | |
| 3 | |
| 300@100mA@2V | |
| 800 | |
| 390(Typ) | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.3 |
| Verpackungsbreite | 5.5 |
| Verpackungslänge | 6.5 |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO-252 |
| Lieferantenverpackung | DPAK |
| 3 | |
| Leitungsform | Gull-wing |
ON Semiconductor has the solution to your circuit's high-voltage requirements with their NPN 2SC6097-TL-E general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 6.5 V. Its maximum power dissipation is 800 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 6.5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |