| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Single | |
| 1 | |
| 120 | |
| 120 | |
| 6 | |
| 2@2mA@1A | |
| 1.5 | |
| 10 | |
| 1.5@2mA@1A | |
| 10000@0.5A@3V|2000@1A@3V | |
| 1000 | |
| -55 | |
| 150 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 11 |
| Verpackungsbreite | 2.7 |
| Verpackungslänge | 8 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-126 |
| 3 | |
| Leitungsform | Through Hole |
If you require a higher current gain value in your circuit, then the barrier strip 2SD1953 Darlington transistor, developed by ON Semiconductor, is for you. This product's maximum continuous DC collector current is 6 A, while its minimum DC current gain is Solder Lug. It has a maximum collector emitter saturation voltage of 150 V V. This Darlington transistor array's maximum emitter base voltage is 12-22 V, while its maximum base emitter saturation voltage is 30 V. Its maximum power dissipation is -40 to 105 mW. It has a maximum emitter base voltage of 12-22 V. This Darlington transistor array has an operating temperature range of -40 °C to 105 °C.
| EDA / CAD Models |