Compliant with Exemption | |
EAR99 | |
Active | |
8541.29.00.95 | |
SVHC | Yes |
SVHC überschreitet Schwellenwert | Yes |
Automotive | No |
PPAP | No |
NPN | |
Single | |
1 | |
100 | |
100 | |
5 | |
12 | |
100 | |
1.3@4mA@4A|1.5@1mA@0.5A | |
750@3A@3V | |
70000 | |
-65 | |
150 | |
Tape and Reel | |
Industrial | |
Befestigung | Surface Mount |
Verpackungshöhe | 4.6(Max) |
Verpackungsbreite | 9.35(Max) |
Verpackungslänge | 10.4(Max) |
Leiterplatte geändert | 2 |
Tab | Tab |
Standard-Verpackungsname | TO-263 |
Lieferantenverpackung | D2PAK |
3 | |
Leitungsform | Gull-wing |
The NPN 2STBN15D100 Darlington transistor from STMicroelectronics is the perfect solution when amplified current gain values are needed. This Darlington transistor array's maximum emitter base voltage is 5 V. This product's maximum continuous DC collector current is 12 A, while its minimum DC current gain is 750@3A@3 V. It has a maximum collector emitter saturation voltage of 1.5@1mA@0.5A|1.3@4mA@4A V. Its maximum power dissipation is 70000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This Darlington transistor array has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V.
EDA / CAD Models |