| RoHS EU | Compliant |
| ECCN (USA) | EAR99 |
| Part Status | Active |
| HTS | 8541.21.00.75 |
| Automotive | No |
| PPAP | No |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.25(Max) |
| Verpackungsbreite | 1.65(Max) |
| Verpackungslänge | 3.05(Max) |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SC-59 |
| Stiftanzahl | 3 |
| Leitungsform | Gull-wing |
Compared to other transistors, the 55GN01CA-TB-E RF bi-polar junction transistor, developed by ON Semiconductor, can properly function in the event of high radio frequency power situations. This RF transistor has an operating temperature range of -55 °C to 150 °C.
