| RoHS EU | Compliant |
| ECCN (USA) | EAR99 |
| Part Status | Active |
| HTS | 8542.39.00.60 |
| Automotive | No |
| PPAP | No |
| Durchmesser | 9.14 |
| Befestigung | Through Hole |
| Verpackungshöhe | 4.45 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-39 |
| Stiftanzahl | 3 |
| Leitungsform | Through Hole |
Use this versatile NPN 5962-8777801XA GP BJT from Texas Instruments to design various electronic circuits. This bipolar junction transistor's maximum emitter base voltage is 42 V. This component comes in tray packaging, useful for fast picking and placing of your parts. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 42 V and a maximum emitter base voltage of 42 V.
