Compliant | |
EAR99 | |
Active | |
8541.10.00.80 | |
Automotive | Unknown |
PPAP | Unknown |
Power MOSFET | |
Single Quad Drain Triple Source | |
Enhancement | |
N | |
1 | |
30 | |
±20 | |
18 | |
5.5@10V | |
103@10V|48@4.5V | |
103 | |
6060@15V | |
3000 | |
8.8 | |
8 | |
51.5 | |
12 | |
-55 | |
150 | |
Befestigung | Surface Mount |
Verpackungshöhe | 1.5 |
Verpackungsbreite | 3.9 |
Verpackungslänge | 4.9 |
Leiterplatte geändert | 8 |
Standard-Verpackungsname | SO |
Lieferantenverpackung | SOIC |
8 | |
Leitungsform | Gull-wing |
Make an effective common gate amplifier using this AO4430 power MOSFET from Alpha & Omega Semiconductor. Its maximum power dissipation is 3000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.