| RoHS EU | Compliant |
| ECCN (USA) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.95 |
| Automotive | Unknown |
| PPAP | Unknown |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.29 mm |
| Verpackungsbreite | 6.1 mm |
| Verpackungslänge | 6.6 mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO-252 |
| Lieferantenverpackung | DPAK |
| Stiftanzahl | 3 |
Make an effective common source amplifier using this AOD3N60 power MOSFET from Alpha & Omega Semiconductor. Its maximum power dissipation is 56800 mW. This MOSFET transistor has an operating temperature range of -50 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
