Alpha and Omega SemiconductorAOK30B60D1IGBT-Chip
Trans IGBT Chip N-CH 600V 60A 208W 3-Pin(3+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| Active | |
| Automotive | Unknown |
| PPAP | Unknown |
| N | |
| Single | |
| ±20 | |
| 600 | |
| 1.85 | |
| 60 | |
| 0.1 | |
| 208 | |
| -55 | |
| 150 | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 21 |
| Verpackungsbreite | 5 |
| Verpackungslänge | 15.8 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247 |
| 3 | |
| Leitungsform | Through Hole |
This AOK30B60D1 IGBT transistor from Alpha & Omega Semiconductor is an electronic switch that can handle large currents with very little gate current drive. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 208000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
| EDA / CAD Models |