| RoHS EU | Compliant |
| ECCN (USA) | EAR99 |
| Part Status | NRND |
| HTS | EA |
| Automotive | Unknown |
| PPAP | Unknown |
| Kanalart | N |
| Konfiguration | Single |
| Max. Kollektor-Emitterspannung (V) | 600 |
| Max. Gate-Emitter-Spannung (V) | ±20 |
| Typische Kollektor-Emitter-Sättigungsspannung (V) | 1.85 |
| Max. Kollektordauerstrom (A) | 100 |
| Max. Gate-Emitter-Leckstrom (uA) | 0.1 |
| Max. Leistungsaufnahme (W) | 312 |
| Mindestbetriebstemperatur (°C) | -55 |
| Max. Betriebstemperatur (°C) | 150 |
| Verpackung | Tube |
| Befestigung | Through Hole |
| Verpackungshöhe | 21 |
| Verpackungsbreite | 5 |
| Verpackungslänge | 15.8 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247 |
| Stiftanzahl | 3 |
| Leitungsform | Through Hole |
This fast-switching AOK50B60D1 IGBT transistor from Alpha & Omega Semiconductor will be perfect in your circuit. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 312000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
