Alpha and Omega SemiconductorAON6407MOSFETs
Trans MOSFET P-CH 30V 85A 8-Pin DFN EP T/R
EAR99 | |
Active | |
8541.29.00.95 | |
SVHC | Yes |
SVHC überschreitet Schwellenwert | Yes |
Automotive | Unknown |
PPAP | Unknown |
Power MOSFET | |
Single Quad Drain Triple Source | |
TMOS | |
Enhancement | |
P | |
1 | |
30 | |
±25 | |
2.6 | |
85 | |
100 | |
1 | |
4.5@10V | |
75@10V | |
75 | |
3505@15V | |
83000 | |
75 | |
16 | |
94 | |
14 | |
-55 | |
150 | |
Tape and Reel | |
Befestigung | Surface Mount |
Verpackungshöhe | 0.95(Max) |
Verpackungsbreite | 5.55 |
Verpackungslänge | 5.2 |
Leiterplatte geändert | 8 |
Standard-Verpackungsname | DFN |
Lieferantenverpackung | DFN EP |
8 | |
Leitungsform | No Lead |
This AON6407 power MOSFET from Alpha & Omega Semiconductor can be used for amplification in your circuit. Its maximum power dissipation is 83000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes tmos technology. This P channel MOSFET transistor operates in enhancement mode.