Alpha and Omega SemiconductorAON6500MOSFETs
Trans MOSFET N-CH 30V 200A 8-Pin DFN EP T/R
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| AlphaMOS | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 2 | |
| 200 | |
| 100 | |
| 1 | |
| 0.95@10V | |
| 49.7@4.5V|107@10V | |
| 107 | |
| 7036@15V | |
| 83000 | |
| 28.8 | |
| 12.8 | |
| 68.5 | |
| 12.3 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.95(Max) |
| Verpackungsbreite | 5.55 |
| Verpackungslänge | 5.2 |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | DFN |
| Lieferantenverpackung | DFN EP |
| 8 | |
| Leitungsform | No Lead |
This AON6500 power MOSFET from Alpha & Omega Semiconductor can be used for amplification in your circuit. Its maximum power dissipation is 83000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes alphamos technology.
| EDA / CAD Models |