Alpha and Omega SemiconductorAOT10B60DIGBT-Chip
Trans IGBT Chip N-CH 600V 20A 163W 3-Pin(3+Tab) TO-220 Tube
| Compliant | |
| EAR99 | |
| Active | |
| EA | |
| Automotive | Unknown |
| PPAP | Unknown |
| N | |
| Single | |
| 600 | |
| ±20 | |
| 1.53 | |
| 20 | |
| 0.1 | |
| 163 | |
| -55 | |
| 175 | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.14 |
| Verpackungsbreite | 4.45 |
| Verpackungslänge | 10.03 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220 |
| 3 |
The AOT10B60D IGBT transistor from Alpha & Omega Semiconductor is the best electronic switch for fast switching. Its maximum power dissipation is 163000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has an operating temperature range of -55 °C to 175 °C. It is made in a single configuration.
| EDA / CAD Models |