| RoHS EU | Compliant |
| ECCN (USA) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.95 |
| Automotive | Unknown |
| PPAP | Unknown |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.05(Max) |
| Verpackungsbreite | 8 |
| Verpackungslänge | 8 |
| Leiterplatte geändert | 4 |
| Standard-Verpackungsname | DFN |
| Lieferantenverpackung | DFN EP |
| Stiftanzahl | 4 |
| Leitungsform | No Lead |
Make an effective common source amplifier using this AOV20S60 power MOSFET from Alpha & Omega Semiconductor. Its maximum power dissipation is 278000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with alphamos technology.
