| RoHS EU | Compliant |
| ECCN (USA) | EAR99 |
| Part Status | Obsolete |
| Automotive | No |
| PPAP | No |
| Befestigung | Through Hole |
| Verpackungshöhe | 5.33(Max) |
| Verpackungsbreite | 4.19(Max) |
| Verpackungslänge | 5.2(Max) |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-92 |
| Stiftanzahl | 3 |
| Leitungsform | Through Hole |
The NPN BC547CZL1G general purpose bipolar junction transistor, developed by ON Semiconductor, is the perfect solution for your high-current density needs. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 625 mW. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V.
