onsemiBC807-40LT3GGP BJT

Trans GP BJT PNP 45V 0.5A 300mW 3-Pin SOT-23 T/R

Implement this versatile PNP BC807-40LT3G GP BJT from ON Semiconductor into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V.

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20.691 Stück: heute versandbereit

    Total0,06 €Price for 1

    • Service Fee  6,59 €

      heute versandbereit

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      2120+
      Manufacturer Lead Time:
      24 Wochen
      Minimum Of :
      1
      Maximum Of:
      20691
      Country Of origin:
      China
         
      • Price: 0,0625 €
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • heute versandbereit

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      2120+
      Manufacturer Lead Time:
      24 Wochen
      Country Of origin:
      China
      • In Stock: 20.691 Stück
      • Price: 0,0625 €