Infineon Technologies AGBC807UE6327HTSA1GP BJT
Trans GP BJT PNP 45V 0.5A 330mW 6-Pin SC-74 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| LTB | |
| BC807UE6327HTSA1 | |
| Automotive | Yes |
| PPAP | Unknown |
| PNP | |
| Bipolar Small Signal | |
| Si | |
| Dual | |
| 2 | |
| 50 | |
| 45 | |
| 5 | |
| 1.2@50mA@500mA | |
| 0.7@50mA@500mA | |
| 0.5 | |
| 160@100mA@1V|40@500mA@1V | |
| 330 | |
| 200(Typ) | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1(Max) |
| Verpackungsbreite | 1.6 |
| Verpackungslänge | 2.9 |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SC-74 |
| 6 | |
| Leitungsform | Gull-wing |
Design various electronic circuits with this versatile PNP BC807UE6327HTSA1 GP BJT from Infineon Technologies. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 330 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |