Infineon Technologies AGBC817K16E6433HTMA1GP BJT
Trans GP BJT NPN 45V 0.5A 500mW Automotive AEC-Q101 3-Pin SOT-23 T/R
Compliant | |
EAR99 | |
LTB | |
BC817K16E6433HTMA1 | |
Automotive | Yes |
PPAP | Unknown |
Befestigung | Surface Mount |
Verpackungshöhe | 1(Max) |
Verpackungsbreite | 1.3 |
Verpackungslänge | 2.9 |
Leiterplatte geändert | 3 |
Standard-Verpackungsname | SOT |
Lieferantenverpackung | SOT-23 |
3 | |
Leitungsform | Gull-wing |
Design various electronic circuits with this versatile NPN BC817K16E6433HTMA1 GP BJT from Infineon Technologies. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 500 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.