Infineon Technologies AGBC817K16E6433HTMA1GP BJT

Trans GP BJT NPN 45V 0.5A 500mW Automotive AEC-Q101 3-Pin SOT-23 T/R

Design various electronic circuits with this versatile NPN BC817K16E6433HTMA1 GP BJT from Infineon Technologies. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 500 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.

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    • Price: 0,0362 €
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