Infineon Technologies AGBC817K25E6327HTSA1GP BJT
Trans GP BJT NPN 45V 0.5A 500mW Automotive AEC-Q101 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| LTB | |
| 8541.21.00.75 | |
| Automotive | Yes |
| PPAP | Unknown |
| NPN | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 50 | |
| 45 | |
| 5 | |
| 0.1 | |
| 1.2@50mA@500mA | |
| 150 | |
| 0.7@50mA@500mA | |
| 0.5 | |
| 100 | |
| 160@100mA@1V|40@500mA@1V | |
| 500 | |
| 170(Typ) | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1(Max) |
| Verpackungsbreite | 1.3 |
| Verpackungslänge | 2.9 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
Design various electronic circuits with this versatile NPN BC817K25E6327HTSA1 GP BJT from Infineon Technologies. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 500 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |