onsemiBC818-40LT1GGP BJT

Trans GP BJT NPN 25V 0.5A 300mW 3-Pin SOT-23 T/R

ON Semiconductor brings you the solution to your high-voltage BJT needs with their NPN BC818-40LT1G general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 25 V and a maximum emitter base voltage of 5 V.

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11.796 Stück: heute versandbereit

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      Vereinigte Staaten von Amerika
      Date Code:
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      Manufacturer Lead Time:
      8 Wochen
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      Country Of origin:
      China
         
      • Price: 0,1119 €
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • heute versandbereit

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      2129+
      Manufacturer Lead Time:
      8 Wochen
      Country Of origin:
      China
      • In Stock: 5.796 Stück
      • Price: 0,1119 €
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      heute versandbereit

      Increment:
      3000
      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      2328+
      Manufacturer Lead Time:
      8 Wochen
      Country Of origin:
      China
      • In Stock: 6.000 Stück
      • Price: 0,0207 €