onsemiBC846ALT3GGP BJT

Trans GP BJT NPN 65V 0.1A 300mW 3-Pin SOT-23 T/R

Add switching and amplifying capabilities to your electronic circuit with this NPN BC846ALT3G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 65 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

Import TariffMay apply to this part if shipping to the United States

Auf Lager: 130.000 Stück

Regional Inventory: 90.000

    Total143,00 €Price for 10000

    90.000 auf Lager: heute versandbereit

    • (10000)

      heute versandbereit

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      2344+
      Manufacturer Lead Time:
      12 Wochen
      Country Of origin:
      China
      • In Stock: 90.000 Stück
      • Price: 0,0143 €
    • (10000)

      Versand in vsl. 2 Tagen

      Ships from:
      Niederlande
      Date Code:
      2344+
      Manufacturer Lead Time:
      12 Wochen
      Country Of origin:
      China
      • In Stock: 40.000 Stück
      • Price: 0,0143 €