onsemiBC846BLT3GGP BJT

Trans GP BJT NPN 65V 0.1A 300mW 3-Pin SOT-23 T/R

If you require a general purpose BJT that can handle high voltages, then the NPN BC846BLT3G BJT, developed by ON Semiconductor, is for you. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It has a maximum collector emitter voltage of 65 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

Import TariffMay apply to this part if shipping to the United States

Auf Lager: 150.882 Stück

Regional Inventory: 70.882

    Total0,05 €Price for 1

    70.882 auf Lager: heute versandbereit

    • Service Fee  6,59 €

      heute versandbereit

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      2230+
      Manufacturer Lead Time:
      16 Wochen
      Minimum Of :
      1
      Maximum Of:
      70882
      Country Of origin:
      China
         
      • Price: 0,0529 €
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • heute versandbereit

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      2230+
      Manufacturer Lead Time:
      16 Wochen
      Country Of origin:
      China
      • In Stock: 70.882 Stück
      • Price: 0,0529 €
    • (10000)

      Versand in vsl. 2 Tagen

      Ships from:
      Niederlande
      Date Code:
      2402+
      Manufacturer Lead Time:
      16 Wochen
      Country Of origin:
      China
      • In Stock: 80.000 Stück
      • Price: 0,0163 €