Compliant | |
EAR99 | |
Active | |
8541.21.00.75 | |
SVHC | Yes |
Automotive | No |
PPAP | No |
NPN | |
Bipolar Small Signal | |
Single | |
1 | |
80 | |
65 | |
6 | |
0.76(Typ)@0.5mA@10mA|0.9(Typ)@5mA@100mA | |
150 | |
0.2@0.5mA@10mA|0.4@5mA@100mA | |
0.1 | |
15 | |
110@2mA@5V | |
200 | |
-65 | |
150 | |
Tape and Reel | |
Befestigung | Surface Mount |
Verpackungshöhe | 1(Max) mm |
Verpackungsbreite | 1.35(Max) mm |
Verpackungslänge | 2.2(Max) mm |
Leiterplatte geändert | 3 |
Standard-Verpackungsname | SOT |
Lieferantenverpackung | SC-70 |
3 | |
Leitungsform | Gull-wing |
NXP Semiconductors brings you the solution to your high-voltage BJT needs with their NPN BC846W,115 general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 200 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 65 V and a maximum emitter base voltage of 6 V.