onsemiBC847ALT1GGP BJT

Trans GP BJT NPN 45V 0.1A 300mW 3-Pin SOT-23 T/R

Jump-start your electronic circuit design with this versatile NPN BC847ALT1G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V.

Import TariffMay apply to this part if shipping to the United States

Auf Lager: 103.943 Stück

Regional Inventory: 2.043

    Total0,08 €Price for 1

    2.043 auf Lager: heute versandbereit

    • Service Fee  6,60 €

      heute versandbereit

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      2239+
      Manufacturer Lead Time:
      12 Wochen
      Minimum Of :
      1
      Maximum Of:
      2043
      Country Of origin:
      China
         
      • Price: 0,0754 €
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • heute versandbereit

      Ships from:
      Vereinigte Staaten von Amerika
      Date Code:
      2239+
      Manufacturer Lead Time:
      12 Wochen
      Country Of origin:
      China
      • In Stock: 2.043 Stück
      • Price: 0,0754 €
    • Versand in vsl. 2 Tagen

      Ships from:
      Niederlande
      Date Code:
      2207+
      Manufacturer Lead Time:
      0 Wochen
      Country Of origin:
      China
      • In Stock: 101.900 Stück
      • Price: 0,1148 €