Diodes IncorporatedBC847B-13-FGP BJT
Trans GP BJT NPN 45V 0.1A 350mW 3-Pin SOT-23 T/R
Compliant | |
EAR99 | |
Active | |
8541.21.00.75 | |
Automotive | No |
PPAP | No |
Befestigung | Surface Mount |
Verpackungshöhe | 0.98 |
Verpackungsbreite | 1.3 |
Verpackungslänge | 2.9 |
Leiterplatte geändert | 3 |
Standard-Verpackungsname | SOT |
Lieferantenverpackung | SOT-23 |
3 | |
Leitungsform | Gull-wing |
Do you require a transistor in your circuit operating in the high-voltage range? This NPN BC847B-13-F general purpose bipolar junction transistor, developed by Diodes Zetex, is your solution. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 350 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.