Infineon Technologies AGBC847BL3E6327XTMA1GP BJT
Trans GP BJT NPN 45V 0.1A 250mW 3-Pin TSLP T/R
| Compliant | |
| EAR99 | |
| LTB | |
| 8541.21.00.75 | |
| Automotive | No |
| PPAP | No |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.45(Max) |
| Verpackungsbreite | 1 |
| Verpackungslänge | 0.6 |
| Leiterplatte geändert | 3 |
| Lieferantenverpackung | TSLP |
| 3 | |
| Leitungsform | No Lead |
If your circuit's specifications require a device that can handle high levels of voltage, Infineon Technologies' NPN BC847BL3E6327XTMA1 general purpose bipolar junction transistor is for you. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 250 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |