Compliant | |
EAR99 | |
Active | |
8541.21.00.75 | |
Automotive | No |
PPAP | No |
NPN | |
Bipolar Small Signal | |
Dual | |
2 | |
50 | |
45 | |
6 | |
0.7(Typ)@0.5mA@10mA|0.9(Typ)@5mA@100mA | |
0.25@0.5mA@10mA|0.6@5mA@100mA | |
0.1 | |
420@2mA@5V | |
350 | |
100(Min) | |
-65 | |
150 | |
Tape and Reel | |
Befestigung | Surface Mount |
Verpackungshöhe | 0.35(Max) |
Verpackungsbreite | 1 |
Verpackungslänge | 1.3 |
Leiterplatte geändert | 6 |
Standard-Verpackungsname | DFN |
Lieferantenverpackung | DFN |
6 | |
Leitungsform | No Lead |
Do you require a transistor in your circuit operating in the high-voltage range? This NPN BC847CDLP-7 general purpose bipolar junction transistor, developed by Diodes Zetex, is your solution. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 350 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.