Diodes IncorporatedBC847PN-7-FGP BJT
Trans GP BJT NPN/PNP 45V 0.1A 200mW 6-Pin SOT-363 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.75 | |
| Automotive | No |
| PPAP | No |
| NPN|PNP | |
| Bipolar Small Signal | |
| Dual | |
| 2 | |
| 50 | |
| 45 | |
| 6 | |
| 0.7(Typ)@0.5mA@10mA|0.9(Typ)@5mA@100mA@NPN|0.95@5mA@100mA@PNP | |
| 0.25@0.5mA@10mA|0.3@0.5mA@10mA|0.65@5mA@100mA@PNP|0.6@5mA@100mA@NPN | |
| 0.1 | |
| 15 | |
| 200@2mA@5V@NPN|220@2mA@5V@PNP | |
| 200 | |
| 200(Typ)@PNP|300(Typ)@NPN | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.95 |
| Verpackungsbreite | 1.3 |
| Verpackungslänge | 2.15 |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-363 |
| 6 | |
| Leitungsform | Gull-wing |
Compared to other transistors, the npn and PNP BC847PN-7-F general purpose bipolar junction transistor, developed by Diodes Zetex, can offer a high-voltage solution in your circuit. This bipolar junction transistor's maximum emitter base voltage is 6@NPN|5@PNP V. Its maximum power dissipation is 200 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6@NPN|5@PNP V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |