Infineon Technologies AGBC847SH6327XTSA1GP BJT
Trans GP BJT NPN 45V 0.1A 250mW Automotive 6-Pin SOT-363 T/R
| Compliant | |
| EAR99 | |
| LTB | |
| Automotive | Yes |
| PPAP | Unknown |
| NPN | |
| Bipolar Small Signal | |
| Si | |
| Dual | |
| 2 | |
| 50 | |
| 45 | |
| 6 | |
| 150 | |
| 0.7(Typ)@0.5mA@10mA|0.9(Typ)@5mA@100mA | |
| 0.25@0.5mA@10mA|0.6@5mA@100mA | |
| 0.1 | |
| 15 | |
| 200@2mA@5V | |
| 250 | |
| 250(Typ) | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.9(Max) |
| Verpackungsbreite | 1.25 |
| Verpackungslänge | 2 |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-363 |
| 6 | |
| Leitungsform | Gull-wing |
The versatility of this NPN BC847SH6327XTSA1 GP BJT from Infineon Technologies makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 250 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |