Infineon Technologies AGBC847SH6433XTMA1GP BJT

Trans GP BJT NPN 45V 0.1A 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R

Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN BC847SH6433XTMA1 GP BJT from Infineon Technologies. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 250 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.

No Stock Available

Quantity Increments of 10000 Minimum 20000
  • Manufacturer Lead Time:
    98 Wochen
    • Price: 0,0627 €
    1. 20000+0,0627 €
    2. 30000+0,0615 €
    3. 50000+0,0527 €
    4. 100000+0,0515 €