Infineon Technologies AGBC849CWH6327XTSA1GP BJT
Trans GP BJT NPN 30V 0.1A 250mW Automotive AEC-Q101 3-Pin SOT-323 T/R
| Compliant | |
| EAR99 | |
| LTB | |
| 8541.21.00.75 | |
| Automotive | Yes |
| PPAP | Unknown |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.9(Max) |
| Verpackungsbreite | 1.25 |
| Verpackungslänge | 2 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-323 |
| 3 | |
| Leitungsform | Gull-wing |
If you require a general purpose BJT that can handle high voltages, then the NPN BC849CWH6327XTSA1 BJT, developed by Infineon Technologies, is for you. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 250 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 6 V.
| EDA / CAD Models |