Infineon Technologies AGBC856SH6327XTSA1GP BJT
Trans GP BJT PNP 65V 0.1A 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R
| Compliant | |
| EAR99 | |
| LTB | |
| BC856SH6327XTSA1 | |
| Automotive | Yes |
| PPAP | Unknown |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.9(Max) |
| Verpackungsbreite | 1.25 |
| Verpackungslänge | 2 |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-363 |
| 6 | |
| Leitungsform | Gull-wing |
If your circuit's specifications require a device that can handle high levels of voltage, Infineon Technologies' PNP BC856SH6327XTSA1 general purpose bipolar junction transistor is for you. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 250 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 65 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |