Infineon Technologies AGBC857BL3E6327XTMA1GP BJT
Trans GP BJT PNP 45V 0.1A 250mW 3-Pin TSLP T/R
| Compliant | |
| EAR99 | |
| LTB | |
| BC857BL3E6327XTMA1 | |
| Automotive | No |
| PPAP | No |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.45(Max) |
| Verpackungsbreite | 1 |
| Verpackungslänge | 0.6 |
| Leiterplatte geändert | 3 |
| Lieferantenverpackung | TSLP |
| 3 |
Infineon Technologies brings you the solution to your high-voltage BJT needs with their PNP BC857BL3E6327XTMA1 general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 250 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |