Diodes IncorporatedBC857BLP4-7BGP BJT
Trans GP BJT PNP 45V 0.1A 250mW 3-Pin DFN-H4 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.75 | |
| Automotive | No |
| PPAP | No |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.35(Max) mm |
| Verpackungsbreite | 1 mm |
| Verpackungslänge | 0.6 mm |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | DFN |
| Lieferantenverpackung | DFN-H4 |
| 3 | |
| Leitungsform | No Lead |
Do you require a transistor in your circuit operating in the high-voltage range? This PNP BC857BLP4-7B general purpose bipolar junction transistor, developed by Diodes Zetex, is your solution. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 250 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |