NXP SemiconductorsBC858B,215GP BJT
Trans GP BJT PNP 30V 0.1A 250mW 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| Active | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1(Max) |
| Verpackungsbreite | 1.4(Max) |
| Verpackungslänge | 3(Max) |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
Implement this versatile PNP BC858B,215 GP BJT from NXP Semiconductors into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 250 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |