NXP SemiconductorsBC869,115GP BJT
Trans GP BJT PNP 20V 2A 1350mW 4-Pin(3+Tab) SOT-89 T/R Automotive AEC-Q101
Compliant | |
EAR99 | |
Active | |
8541.29.00.75 | |
SVHC | Yes |
Automotive | Yes |
PPAP | Unknown |
Befestigung | Surface Mount |
Verpackungshöhe | 1.6(Max) |
Verpackungsbreite | 2.6(Max) |
Verpackungslänge | 4.6(Max) |
Leiterplatte geändert | 3 |
Tab | Tab |
Standard-Verpackungsname | SOT |
Lieferantenverpackung | SOT-89 |
4 |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile PNP BC869,115 GP BJT from NXP Semiconductors. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1350 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 20 V and a maximum emitter base voltage of 5 V.