Infineon Technologies AGBCP5516H6327XTSA1GP BJT
Trans GP BJT NPN 60V 1A 2000mW Automotive AEC-Q101 4-Pin(3+Tab) SOT-223 T/R
| Compliant | |
| EAR99 | |
| LTB | |
| 8541.29.00.75 | |
| Automotive | Yes |
| PPAP | Unknown |
| NPN | |
| Bipolar Power | |
| Si | |
| Single Dual Collector | |
| 1 | |
| 60 | |
| 60 | |
| 5 | |
| 150 | |
| 0.5@50mA@500mA | |
| 1 | |
| 100 | |
| 100@150mA@2V|25@500mA@2V|25@5mA@2V | |
| 2000 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.6 |
| Verpackungsbreite | 3.5 |
| Verpackungslänge | 6.5 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-223 |
| 4 | |
| Leitungsform | Gull-wing |
Infineon Technologies has the solution to your circuit's high-voltage requirements with their BCP5516H6327XTSA1 general purpose bipolar junction transistor.
| EDA / CAD Models |