STMicroelectronicsBCP56-16GP BJT

Trans GP BJT NPN 80V 1A 1600mW 4-Pin(3+Tab) SOT-223 T/R

The three terminals of this NPN BCP56-16 GP BJT from STMicroelectronics give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1600 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V.

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Quantity Increments of 1000 Minimum 4000
  • Date Code:
    2342+
    Manufacturer Lead Time:
    14 Wochen
    Country Of origin:
    China
    • Price: 0,1606 €
    1. 4000+0,1606 €
    2. 5000+0,1483 €