Diodes IncorporatedBCP5616TAGP BJT
Trans GP BJT NPN 80V 1A 2000mW 4-Pin(3+Tab) SOT-223 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| Automotive | No |
| PPAP | No |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.55 mm |
| Verpackungsbreite | 3.5 mm |
| Verpackungslänge | 6.5 mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-223 |
| 4 |
Diodes Zetex brings you the solution to your high-voltage BJT needs with their NPN BCP5616TA general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |
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