| RoHS EU | Compliant |
| ECCN (USA) | EAR99 |
| Part Status | LTB |
| HTS | 8541.21.00.95 |
| Automotive | Yes |
| PPAP | Unknown |
| Typ | NPN|PNP |
| Konfiguration | Dual |
| Max. Kollektor-Emitterspannung (V) | 50 |
| Max. Dauer-Kollektorgleichstrom (mA) | 100 |
| Mindestgleichstromverstärkung | 70@5mA@5V |
| Typische Stromverstärkungsbandbreite (MHz) | 170 |
| Typischer Eingangswiderstand (kOhm) | 2.2 |
| Max. Kollektor-Emitter-Sättigungsspannung (V) | 0.3@0.5mA@10mA |
| Typisches Widerstandsverhältnis | 0.047 |
| Max. Leistungsaufnahme (mW) | 250 |
| Mindestbetriebstemperatur (°C) | -65 |
| Max. Betriebstemperatur (°C) | 150 |
| Verpackung | Tape and Reel |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.9(Max) |
| Verpackungsbreite | 1.25 |
| Verpackungslänge | 2 |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-363 |
| Stiftanzahl | 6 |
| Leitungsform | Gull-wing |
Apply the applications of a traditional bi polar junction transistor, in digital circuits with this npn and PNP BCR08PNH6327XTSA1 digital transistor from Infineon Technologies, ideal for any digital signal processing circuit! This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 70@5mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.5mA@10mA V. Its maximum power dissipation is 250 mW. It has a maximum collector emitter voltage of 50 V. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This transistor has an operating temperature range of -65 °C to 150 °C. It is made in a dual configuration.
