| RoHS EU | Compliant |
| ECCN (USA) | EAR99 |
| Part Status | LTB |
| HTS | 8541.21.00.75 |
| Automotive | Yes |
| PPAP | Unknown |
| Typ | NPN |
| Konfiguration | Single |
| Max. Kollektor-Emitterspannung (V) | 50 |
| Max. Dauer-Kollektorgleichstrom (mA) | 100 |
| Mindestgleichstromverstärkung | 70@5mA@5V |
| Typische Stromverstärkungsbandbreite (MHz) | 170 |
| Typischer Eingangswiderstand (kOhm) | 2.2 |
| Max. Kollektor-Emitter-Sättigungsspannung (V) | 0.3@0.5mA@10mA |
| Typisches Widerstandsverhältnis | 0.047 |
| Max. Leistungsaufnahme (mW) | 200 |
| Mindestbetriebstemperatur (°C) | -65 |
| Max. Betriebstemperatur (°C) | 150 |
| Verpackung | Tape and Reel |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1(Max) |
| Verpackungsbreite | 1.3 |
| Verpackungslänge | 2.9 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| Stiftanzahl | 3 |
| Leitungsform | Gull-wing |
Do you need a device that can offer the benefits of traditional BJTs with the compatibility for digital signal processors? The NPN BCR108E6433HTMA1 digital transistor from Infineon Technologies is your solution. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 70@5mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.5mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 200 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It is made in a single configuration.
