Infineon Technologies AGBCR108SH6327XTSA1Digital-BJT
Trans Digital BJT NPN 50V 100mA 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R
| Compliant | |
| EAR99 | |
| LTB | |
| Automotive | Yes |
| PPAP | Unknown |
| NPN | |
| Dual | |
| 50 | |
| 100 | |
| 70@5mA@5V | |
| 170 | |
| 2.2 | |
| 0.047 | |
| 0.3@0.5mA@10mA | |
| 250 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.9(Max) |
| Verpackungsbreite | 1.25 |
| Verpackungslänge | 2 |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-363 |
| 6 | |
| Leitungsform | Gull-wing |
Infineon Technologies brings you their latest NPN BCR108SH6327XTSA1 digital transistor, a component that can easily provide you with most of the features of traditional BJT's while maintaining a digital form. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 70@5mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.5mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 250 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It is made in a dual configuration. This transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |