Infineon Technologies AGBCR112E6327HTSA1Digital-BJT
Trans Digital BJT NPN 50V 0.1mA 200mW 3-Pin SOT-23 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| LTB | |
| 8541.29.00.95 | |
| Automotive | Yes |
| PPAP | Unknown |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1(Max) |
| Verpackungsbreite | 1.3 |
| Verpackungslänge | 2.9 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
Are you designing a digital processing circuit and are looking to apply the characteristics of traditional BJT's within? Look no further than the NPN BCR112E6327HTSA1 digital transistor from Infineon Technologies. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 20@5mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.5mA@10mA V. Its maximum power dissipation is 200 mW. It has a maximum collector emitter voltage of 50 V. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This transistor has an operating temperature range of -65 °C to 150 °C. It is made in a single configuration.
| EDA / CAD Models |