| RoHS EU | Compliant |
| ECCN (USA) | EAR99 |
| Part Status | LTB |
| HTS | 8541.21.00.95 |
| Automotive | Yes |
| PPAP | Unknown |
| Typ | NPN |
| Konfiguration | Dual |
| Max. Kollektor-Emitterspannung (V) | 50 |
| Max. Dauer-Kollektorgleichstrom (mA) | 100 |
| Mindestgleichstromverstärkung | 70@5mA@5V |
| Typische Stromverstärkungsbandbreite (MHz) | 150 |
| Typischer Eingangswiderstand (kOhm) | 4.7 |
| Max. Kollektor-Emitter-Sättigungsspannung (V) | 0.3@0.5mA@10mA |
| Typisches Widerstandsverhältnis | 0.1 |
| Max. Leistungsaufnahme (mW) | 250 |
| Mindestbetriebstemperatur (°C) | -65 |
| Max. Betriebstemperatur (°C) | 150 |
| Verpackung | Tape and Reel |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.9(Max) |
| Verpackungsbreite | 1.25 |
| Verpackungslänge | 2 |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-363 |
| Stiftanzahl | 6 |
| Leitungsform | Gull-wing |
If you are building a digital signal processing device, make sure to use Infineon Technologies' NPN BCR116SH6327XTSA1 digital transistor's within your circuit! This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 70@5mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.5mA@10mA V. Its maximum power dissipation is 250 mW. It has a maximum collector emitter voltage of 50 V. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It is made in a dual configuration. This transistor has an operating temperature range of -65 °C to 150 °C.
