Infineon Technologies AGBCR133E6327HTSA1Digital-BJT
Trans Digital BJT NPN 50V 0.1A 200mW 3-Pin SOT-23 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| LTB | |
| 8541.29.00.95 | |
| Automotive | Yes |
| PPAP | Unknown |
| NPN | |
| Single | |
| 50 | |
| 100 | |
| 30@5mA@5V | |
| 130 | |
| 10 | |
| 0.3@0.5mA@10mA | |
| 1 | |
| 200 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1(Max) |
| Verpackungsbreite | 1.3 |
| Verpackungslänge | 2.9 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
Infineon Technologies' NPN BCR133E6327HTSA1 digital transistor is the ideal component to use in situations where digital signal processing is required. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 30@5mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.5mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 200 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This transistor has an operating temperature range of -65 °C to 150 °C. It is made in a single configuration.
| EDA / CAD Models |