| RoHS EU | Compliant |
| ECCN (USA) | EAR99 |
| Part Status | LTB |
| HTS | 8541.21.00.75 |
| Automotive | Yes |
| PPAP | Unknown |
| Typ | NPN |
| Konfiguration | Dual |
| Max. Kollektor-Emitterspannung (V) | 50 |
| Max. Dauer-Kollektorgleichstrom (mA) | 100 |
| Mindestgleichstromverstärkung | 30@5mA@5V |
| Typische Stromverstärkungsbandbreite (MHz) | 130 |
| Typischer Eingangswiderstand (kOhm) | 10 |
| Max. Kollektor-Emitter-Sättigungsspannung (V) | 0.3@0.5mA@10mA |
| Typisches Widerstandsverhältnis | 1 |
| Max. Leistungsaufnahme (mW) | 250 |
| Mindestbetriebstemperatur (°C) | -65 |
| Max. Betriebstemperatur (°C) | 150 |
| Verpackung | Tape and Reel |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.9(Max) |
| Verpackungsbreite | 1.25 |
| Verpackungslänge | 2 |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-363 |
| Stiftanzahl | 6 |
| Leitungsform | Gull-wing |
If you require the digital form of a traditional BJT for your signal processing needs, then the NPN BCR133SH6433XTMA1 digital transistor from Infineon Technologies is for you. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 30@5mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.5mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 250 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This transistor has an operating temperature range of -65 °C to 150 °C. It is made in a dual configuration.
