Infineon Technologies AGBCR135SH6327XTSA1Digital-BJT
Trans Digital BJT NPN 50V 0.1A 250mW 6-Pin SOT-363 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| LTB | |
| 8541.29.00.95 | |
| Automotive | Yes |
| PPAP | Unknown |
| NPN | |
| Dual | |
| 50 | |
| 100 | |
| 70@5mA@5V | |
| 150 | |
| 10 | |
| 0.3@0.5mA@10mA | |
| 0.21 | |
| 250 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.9(Max) |
| Verpackungsbreite | 1.25 |
| Verpackungslänge | 2 |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-363 |
| 6 | |
| Leitungsform | Gull-wing |
Apply the applications of a traditional bi polar junction transistor, in digital circuits with this NPN BCR135SH6327XTSA1 digital transistor from Infineon Technologies, ideal for any digital signal processing circuit! This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 70@5mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.5mA@10mA V. Its maximum power dissipation is 250 mW. It has a maximum collector emitter voltage of 50 V. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This transistor has an operating temperature range of -65 °C to 150 °C. It is made in a dual configuration.
| EDA / CAD Models |